THEORETICAL STUDY OF HIGH-FREQUENCY PERFORMANCE OF A SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR FABRICATED ON A HIGH-RESISTIVITY SUBSTRATE

被引：2
作者：
ALLEY, GD
TALLEY, HE
机构：
[1] UNIV KANSAS,DEPT ELECT ENGN,LAWRENCE,KS
[2] BELL TEL LABS INC,N ANDOVER,MA 01845
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1974年 / TT22卷 / 03期
关键词：
D O I：
10.1109/TMTT.1974.1128200
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：183 / 189
页数：7
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