SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS

被引：74
作者：
TROUTMAN, RR [1 ]
机构：
[1] IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1974年 / SC 9卷 / 02期
关键词：
D O I：
10.1109/JSSC.1974.1050462
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：55 / 60
页数：6
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