OBSERVATION OF ELECTROLUMINESCENCE ABOVE ROOM-TEMPERATURE IN STRAINED P-TYPE SI0.65GE0.35/SI(111) MULTIPLE-QUANTUM WELLS

被引：5

作者：

FUKATSU, S ^{[1
]}

USAMI, N ^{[1
]}

SHIRAKI, Y ^{[1
]}

NISHIDA, A ^{[1
]}

NAKAGAWA, K ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90796-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Electroluminescence (EL) was observed above room temperature in p-type strained Si0.65Ge0.35/Si multiple quantum wells (MQWs) grown on Si(111) substrates by Si MBE. No-phonon band-edge luminescence and its transverse optical phonon replica were well resolved in the EL spectrum at 330 K. In contrast, a broad alloy band dominated the spectrum at lower temperatures, located approximately 100 meV below the band-edge state. Such alloy band emission was found to develop in QWs with a higher Ge content, x > 0.3. Both the emission of this alloy band and the quantized band-edge states were observed around 180 K. The emission intensity of the alloy band tended to saturate with increasing current injection, whereas the band-edge emission was found to increase superlinearly, suggesting the alloy band emission to be of localized excitonic origin.

引用

页码：1083 / 1087

页数：5

共 13 条

[1] ELECTROLUMINESCENCE FROM STRAINED SIGE/SI QUANTUM-WELL STRUCTURES GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY [J].