THE EFFECTIVE EMITTER AREA OF POWER TRANSISTORS

被引:13
作者
EMEIS, R
HERLET, A
SPENKE, E
机构
来源
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1958年 / 46卷 / 06期
关键词
D O I
10.1109/JRPROC.1958.286907
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1220 / 1229
页数:10
相关论文
共 11 条
  • [1] DESIGN THEORY OF JUNCTION TRANSISTORS
    EARLY, JM
    [J]. BELL SYSTEM TECHNICAL JOURNAL, 1953, 32 (06): : 1271 - 1312
  • [2] EMEIS R, 1957, Z NATURFORSCH PT A, V12, P1016
  • [3] SOME ASPECTS OF THE DESIGN OF POWER TRANSISTORS
    FLETCHER, NH
    [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (05): : 551 - 559
  • [4] POWER RECTIFIERS AND TRANSISTORS
    HALL, RN
    [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518
  • [5] HERLET A, 1955, Z ANGEW PHYS, V7, P99
  • [6] HERLET A, 1955, Z ANGEW PHYS, V7, P149
  • [7] HERLET A, 1957, Z ANGEW PHYS, V9, P155
  • [8] HERLET A, 1955, Z ANGEW PHYS, V7, P195
  • [9] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
    SHOCKLEY, W
    [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
  • [10] SPENKE E, 1958, ELECTRONIC SEMICONDU, P100