THE EFFECTIVE EMITTER AREA OF POWER TRANSISTORS

被引:13
作者
EMEIS, R
HERLET, A
SPENKE, E
机构
来源
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1958年 / 46卷 / 06期
关键词
D O I
10.1109/JRPROC.1958.286907
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1220 / 1229
页数:10
相关论文
共 11 条
[1]   DESIGN THEORY OF JUNCTION TRANSISTORS [J].
EARLY, JM .
BELL SYSTEM TECHNICAL JOURNAL, 1953, 32 (06) :1271-1312
[2]  
EMEIS R, 1957, Z NATURFORSCH PT A, V12, P1016
[3]   SOME ASPECTS OF THE DESIGN OF POWER TRANSISTORS [J].
FLETCHER, NH .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (05) :551-559
[4]   POWER RECTIFIERS AND TRANSISTORS [J].
HALL, RN .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518
[5]  
HERLET A, 1955, Z ANGEW PHYS, V7, P99
[6]  
HERLET A, 1955, Z ANGEW PHYS, V7, P149
[7]  
HERLET A, 1957, Z ANGEW PHYS, V9, P155
[8]  
HERLET A, 1955, Z ANGEW PHYS, V7, P195
[9]   THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489
[10]  
SPENKE E, 1958, ELECTRONIC SEMICONDU, P100