HIGH-TEMPERATURE OHMIC CONTACT METALLIZATIONS FOR N-TYPE 3C-SIC

被引：17
作者：
SHOR, JS
WEBER, RA
PROVOST, LG
GOLDSTEIN, D
KURTZ, AD
机构：
[1] Kulite Semiconductor Products, Leonia
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 02期
关键词：
D O I：
10.1149/1.2054771
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Several high temperature-metallization systems, based on Ti and W ohmic contacts have been examined for n-type beta-SiC. Contact resistivities of almost-equal-to 10(-4) OMEGA-cm2 were measured on as deposited films. The Ti/TiN/Pt/Au metallizations exhibited limited deterioration in the electrical properties after 20 h at 650-degrees-C in air These contacts have the potential for utilization in short-lifetime devices in the temperature range of 600 to 700-degrees-C and for long-term operation at temperatures of 400 to 500-degrees-C.
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收藏
页码：579 / 581
页数：3
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