ATOMIC INTERMIXING IN SHORT-PERIOD GAAS/ALAS SUPERLATTICES

被引：24
作者：
JUSSERAND, B
MOLLOT, F
PLANEL, R
MOLINARI, E
BARONI, S
机构：
[1] CNR,IST OM CORBINO,I-00189 ROME,ITALY
[2] SISSA,I-34014 TRIESTE,ITALY
来源：
SURFACE SCIENCE | 1992年 / 267卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(92)91114-Q
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We compare the confined optical frequencies measured by Raman scattering and predicted by ab initio lattice dynamics including atomic intermixing. We combined the structural information deduced from both GaAs and AlAs phonons. The residual Ga (Al) concentrations in the AlAs (GaAs) layers is estimated. They strongly decrease with decreasing growth temperature. However, a significant amount of gallium in the AlAs is evidenced even at 400-degrees-C.
引用
收藏
页码：171 / 175
页数：5
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