DIFFUSION OF BORON FROM SHALLOW ION IMPLANTS IN SILICON

被引：63

作者：

WAGNER, S

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 11期

关键词：

D O I：

10.1149/1.2404044

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1570 / &

共 19 条

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[7]

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[8] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

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[9]

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[10] ON REDISTRIBUTION OF BORON IN DIFFUSED LAYER DURING THERMAL OXIDATION [J].

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