(GAAS)M(ALAS)N SHORT-PERIOD SUPERLATTICE QUANTUM-WELL LASERS

被引：4

作者：

CHAND, N ^{[1
]}

DUTTA, NK ^{[1
]}

LOPATA, J ^{[1
]}

HULL, R ^{[1
]}

GEVA, M ^{[1
]}

机构：

[1] AT&T BELL LABS, CTR SOLID STATE TECHNOL, BREINIGSVILLE, PA 18031 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.353155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and performance characteristics of (GaAs)3/(AlAs)1 short-period superlattice (SPS) quantum-well lasers emitting at 737 nm. The SPSs consists of eight periods of 3 and 1 monolayers of GaAs and AlAs, respectively. The (GaAs)m/(AlAs)n SPSs have many advantages over their equivalent AlGaAs alloy counterparts. The broad-area threshold current density, J(th), for 500-mum-long lasers is 510 A cm-2. The 500-mum-long ridge waveguide lasers have a threshold current of 48 mA with a characteristic temperature of 68 K in the temperature range 19-60-degrees-C. The external differential quantum efficiency near threshold is 0.58 mW/mA/facet. The devices lase in a single mode with spectral width within the resolution limit of the spectrometer.

引用

页码：2085 / 2088

页数：4

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