DC AND AC CHARACTERISTICS OF AL0.25GA0.75AS/GAAS QUANTUM-WELL DELTA-DOPED CHANNEL FET GROWN BY LP-MOCVD

被引：26
作者：
JEONG, DH
JANG, KS
LEE, JS
JEONG, YH
KIM, B
机构：
[1] Department of Electronic and Electrical Engineering, Pohang Institute of Science and Technology, Pohang
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 05期
关键词：
D O I：
10.1109/55.145050
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Al0.25Ga0.75As/GaAs quantum-well delta-doped channel FET's (QWDFET's) have been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The FET's with a gate dimension of 1.8-mu-m x 100-mu-m had a maximum extrinsic transconductance of 190 mS/mm and a maximum current density of 425 mA/mm. The devices showed extremely broad transconductance around its peak. The S-parameter measurements indicated that the current gain and power gain cutoff frequencies of the device were 7 and 15 GHz, respectively. The transconductance versus gate voltage profiles showed a plateau region through a range of 1.7 V supporting spatial confinement of the electrons. These values are among the best reported for delta-doped GaAs-based FET's with a similar device geometry.
引用
收藏
页码：270 / 272
页数：3
相关论文
共 10 条
[1]   DC AND AC CHARACTERISTICS OF A NONALLOYED DELTA-DOPED MESFET BY ATOMIC LAYER EPITAXY [J].
HASHEMI, M ;
MCDERMOTT, B ;
MISHRA, UK ;
RAMDANI, J ;
MORRIS, A ;
HAUSER, JR ;
BEDAIR, SM .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (06) :258-260
[2]   CHARACTERISTICS OF ALGAAS GAAS QUANTUM-WELL DELTA-DOPED CHANNEL FET (QUADFET) [J].
HONG, WP ;
ZRENNER, A ;
KIM, OH ;
HARBISON, J ;
FLOREZ, L ;
DEROSA, F .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (08) :1924-1926
[3]   ULTRA-THIN-CHANNELLED GAAS-MESFET WITH DOUBLE-DELTA-DOPED LAYERS [J].
ISHIBASHI, A ;
FUNATO, K ;
MORI, Y .
ELECTRONICS LETTERS, 1988, 24 (16) :1034-1035
[4]  
JANG KS, 1991, AUG INT C EL INF COM
[5]   ALINAS/INP DELTA-DOPED CHANNEL FIELD-EFFECT TRANSISTOR GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].
JEONG, YH ;
JEONG, DH ;
HONG, WP ;
CANEAU, C ;
BHAT, R ;
HAYES, JR .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (2A) :L66-L67
[6]  
JEONG YH, 1990, INT C ELECTRONIC MAT
[7]   SELENIUM AND SILICON DELTA-DOPING PROPERTIES OF GAAS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
KIM, Y ;
KIM, MS ;
MIN, SK ;
LEE, CC ;
YOO, KH .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) :2747-2751
[8]   SI DELTA-DOPED FIELD-EFFECT TRANSISTORS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
PAN, N ;
CARTER, J ;
JACKSON, GS ;
HENDRIKS, H ;
ZHENG, XL ;
KIM, MH .
APPLIED PHYSICS LETTERS, 1991, 59 (04) :458-460
[9]   THE DELTA-DOPED FIELD-EFFECT TRANSISTOR (DELTA-FET) [J].
SCHUBERT, EF ;
FISCHER, A ;
PLOOG, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :625-632
[10]   ELECTRON-MOBILITY ENHANCEMENT AND ELECTRON-CONCENTRATION ENHANCEMENT IN DELTA-DOPED N-GAAS AT T=300K [J].
SCHUBERT, EF ;
CUNNINGHAM, JE ;
TSANG, WT .
SOLID STATE COMMUNICATIONS, 1987, 63 (07) :591-594
1