CONDUCTION-BAND-TO-ACCEPTOR MAGNETO-LUMINESCENCE IN ZINC TELLURIDE

被引：35

作者：

DEAN, PJ ^{[1
]}

VENGHAUS, H ^{[1
]}

SIMMONDS, PE ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.18.6813

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6813 / 6823

页数：11

共 48 条

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[7]

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[8] BAND PARAMETERS OF SEMICONDUCTORS WITH ZINCBLENDE, WURTZITE, AND GERMANIUM STRUCTURE [J].

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[9]

CHESNOKOVA DB, 1976, SOV PHYS SEMICOND+, V10, P1311

[10] POTENTIAL-DEPENDENT ELECTRON AND HOLE G-VALUES AND QUENCHED DIAMAGNETISM IN GAP .1. EXPERIMENTAL RESULTS AND PROPERTIES OF DONOR STATES [J].

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PHYSICAL REVIEW B, 1977, 15 (08) :3906-3916

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