FLUX AND FLUENCE DEPENDENCE OF IMPLANTATION DISORDER IN GAAS SUBSTRATES

被引：9

作者：

ANDERSON, WJ

PARK, YS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 08期

关键词：

D O I：

10.1063/1.325471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4568 / 4570

页数：3

共 11 条

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ANDERSON, WJ ;

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[2] ELECTROREFLECTANCE MEASUREMENTS OF MELT-DOPED AND ION-IMPLANTED GAAS [J].

ANDERSON, WJ ;

DOUGLASS, CA ;

PARK, YS .

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[3] THERMAL AND INJECTION ANNEALING OF NEUTRON-IRRADIATED P-TYPE SILICON BETWEEN 76 DEGREES K AND 300 DEGREES K [J].

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[4]

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[6] TRANSIENT ANNEALING OF DEFECTS IN IRRADIATED SILICON DEVICES [J].

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[7]

Hunsperger R. G., 1971, Radiation Effects, V9, P133, DOI 10.1080/00337577108242045

[8]

LOWE LF, 1975, REV SCI INSTRUM, V46, P533

[9] DOSE-RATE EFFECTS IN INDIUM IMPLANTED GAAS [J].

TINSLEY, AW ;

STEPHENS, GA ;

NOBES, MJ ;

GRANT, WA .

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[10]

Winterbon K. B., 1975, ION IMPLANTATION RAN

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