ANISOTROPIC-DEFECT INTRODUCTION IN GAAS BY ELECTRON-IRRADIATION

被引：90

作者：

PONS, D ^{[1
]}

BOURGOIN, J ^{[1
]}

机构：

[1] ECOLE NORM SUPER,PHYS SOLIDES GRP,CNRS LAB,F-75221 PARIS,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 47卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.47.1293

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1293 / 1296

页数：4

共 9 条

[1]

ARNOLD GW, 1968, RAD EFFECTS SEMICOND, P435

[2]

EISEN FH, 1964, PHYS REV A-GEN PHYS, V135, P1394

[3] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

KIMERLING, LC .

PHYSICAL REVIEW B, 1977, 15 (10) :4874-4882

[4]

LANG DV, 1975, I PHYS C SER, V23, P581

[5]

LINDSAY DJC, 1973, INT PHYS C SER, V16, P34

[6] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].

MARTIN, GM ;

MITONNEAU, A ;

MIRCEA, A .

ELECTRONICS LETTERS, 1977, 13 (07) :191-193

[7] THE COULOMB SCATTERING OF RELATIVISTIC ELECTRONS BY NUCLEI [J].

MCKINLEY, WA ;

FESHBACH, H .

PHYSICAL REVIEW, 1948, 74 (12) :1759-1763

[8] ENERGY-DEPENDENCE OF DEEP LEVEL INTRODUCTION IN ELECTRON-IRRADIATED GAAS [J].

PONS, D ;

MOONEY, PM ;

BOURGOIN, JC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2038-2042

[9]

[No title captured]

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