SOLUTION OF BOLTZMANN-EQUATION IN ELLIPSOIDAL VALLEYS WITH APPLICATION TO (100) VALLEYS OF GAAS AND GAP

被引：15

作者：

FLETCHER, K ^{[1
]}

BUTCHER, PN ^{[1
]}

机构：

[1] UNIV WARWICK, COVENTRY, WARWICKSHIRE, ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 06期

关键词：

D O I：

10.1088/0022-3719/6/6/013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：976 / 996

页数：21

共 21 条

[1] INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS [J].

BIRMAN, JL ;

LAX, M ;

LOUDON, R .

PHYSICAL REVIEW, 1966, 145 (02) :620-&

[2] GUNN EFFECT [J].

BUTCHER, PM .

REPORTS ON PROGRESS IN PHYSICS, 1967, 30 :97-+

[3] Optical properties of the donor tin in gallium phosphide [J].

Dean, P. J. ;

Faulkner, R. A. ;

Kimura, S. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4062-4076

[4] ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J].

DEAN, PJ .

PHYSICAL REVIEW, 1967, 157 (03) :655-&

[5]

DRABBLE JR, 1966, SEMICONDUCT SEMIMET, V2, P75

[6] ELECTRON SCATTERING IN INSB [J].

EHRENREICH, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) :131-149

[7] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].

EHRENREICH, H .

PHYSICAL REVIEW, 1960, 120 (06) :1951-1963

[8] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[9] Electrical properties of the GaAs X-1C minima at low electric fields from a high-pressure experiment [J].

Fitt, G. D. ;

Lees, J. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4144-4160

[10] EXACT SOLUTION OF LINEARIZED BOLTZMANN-EQUATION WITH APPLICATIONS TO HALL-MOBILITY AND HALL FACTOR OF GAAS [J].

FLETCHER, K ;

BUTCHER, PN .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (02) :212-&

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