A NEW INTRINSIC GETTERING TECHNIQUE USING MICRODEFECTS IN CZOCHRALSKI SILICON CRYSTAL - A NEW DOUBLE PREANNEALING TECHNIQUE

被引：60
|
作者：
NAGASAWA, K
MATSUSHITA, Y
KISHINO, S
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 07期
关键词：
D O I：
10.1063/1.91998
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：622 / 624
页数：3
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