HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF ALMBE INAS GROWN ON (001) GAAS SUBSTRATES

被引：2
|
作者：
MOLINA, SI [1 ]
ARAGON, G [1 ]
PETFORDLONG, AK [1 ]
GARCIA, R [1 ]
机构：
[1] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND
来源：
ULTRAMICROSCOPY | 1992年 / 40卷 / 03期
关键词：
D O I：
10.1016/0304-3991(92)90134-6
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
High-resolution electron microscopy has been used to study the distribution of defects in a heteroepitaxial system with high lattice mismatch (InAs/GaAs, (a(InAs) - a(GaAs))/a(GaAs) = 7.2%), grown by atomic layer molecular beam epitaxy. The study has been carried out on cross-section samples. A high density of dislocations, mainly of the Lomer type, has been found in a region of the epilayer near the interface. Banding contrast is observed in the interfacial region; possible explanations for this contrast are given.
引用
收藏
页码：370 / 375
页数：6
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