LOW-TEMPERATURE DEPOSITION OF SILICON DIOXIDE FILMS FROM ELECTRON-CYCLOTRON RESONANT MICROWAVE PLASMAS

被引:60
作者
HERAK, TV [1 ]
CHAU, TT [1 ]
THOMSON, DJ [1 ]
MEJIA, SR [1 ]
BUCHANAN, DA [1 ]
KAO, KC [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.342815
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2457 / 2463
页数:7
相关论文
共 38 条
[11]   EVIDENCE OF 2-PHASE STRUCTURE IN AMORPHOUS-SILICON OXIDES PRODUCED BY N2O+SIH4 GLOW-DISCHARGE DECOMPOSITION [J].
FORTUNATO, G ;
DELLASALA, D .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :423-426
[12]  
FORTUNATO G, 1987, J NONCRYST SOLIDS, V98, P423
[13]  
HOLLAHAN JR, 1970, J ELECTROCHEM SOC, V126, P930
[14]  
Irene E. A., 1985, Semiconductor International, V8, P91
[15]   A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES [J].
IRENE, EA ;
TIERNEY, E ;
ANGILELLO, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2594-2597
[16]   RESIDUAL-STRESS, CHEMICAL ETCH RATE, REFRACTIVE-INDEX, AND DENSITY-MEASUREMENTS ON SIO2-FILMS PREPARED USING HIGH-PRESSURE OXYGEN [J].
IRENE, EA ;
DONG, DW ;
ZETO, RJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :396-399
[17]   ROOM-TEMPERATURE GLOW-DISCHARGE DEPOSITION OF SILICON-OXIDES FROM SIH4 AND N2O [J].
KAGANOWICZ, G ;
BAN, VS ;
ROBINSON, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03) :1233-1237
[18]  
KOBEDA E, 1986, J VAC SCI TECHNOL B, V4, P722
[19]   FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].
LENZLINGER, M ;
SNOW, EH .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+
[20]   DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
LUCOVSKY, G ;
RICHARD, PD ;
TSU, DV ;
LIN, SY ;
MARKUNAS, RJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :681-688