LOW-TEMPERATURE DEPOSITION OF SILICON DIOXIDE FILMS FROM ELECTRON-CYCLOTRON RESONANT MICROWAVE PLASMAS

被引：60

作者：

HERAK, TV ^{[1
]}

CHAU, TT ^{[1
]}

THOMSON, DJ ^{[1
]}

MEJIA, SR ^{[1
]}

BUCHANAN, DA ^{[1
]}

KAO, KC ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2457 / 2463

页数：7

共 38 条

[1]

ADAMS AC, 1983, SOLID STATE TECHNOL, V26, P135

[2] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE [J].

ADAMS, AC ;

ALEXANDER, FB ;

CAPIO, CD ;

SMITH, TE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1545-1551

[3] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

BATEY, J ;

TIERNEY, E .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3136-3145

[4] A STUDY OF ELECTRONIC STATES IN A-SIOX AND A-SINX THIN-FILMS BY INFRARED, AUGER-ELECTRON AND X-RAY PHOTOELECTRON SPECTROSCOPIES [J].

CHAO, SS ;

LUCOVSKY, G ;

LIN, SY ;

WONG, CK ;

RICHARD, PD ;

TSU, DV ;

TAKAGI, Y ;

KEEM, JE ;

TYLER, JE ;

PAI, P .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :929-932

[5]

CLASS WH, 1985, VLSI HDB, P443

[6] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[7] OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS [J].

DOREMUS, RH .

THIN SOLID FILMS, 1984, 122 (03) :191-196

[8] VISCOUS-FLOW OF THERMAL SIO2 [J].

EERNISSE, EP .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :290-293

[9]

EERNISSE EP, 1978, APPL PHYS LETT, V35, P8

[10] A REVISED ANALYSIS OF DRY OXIDATION OF SILICON [J].

FARGEIX, A ;

GHIBAUDO, G ;

KAMARINOS, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2878-2880

← 1 2 3 4 →