EPITAXIAL GROWTH OF ZINC- AND CADMIUM-DOPED GALLIUM PHOSPHIDE BY GALLIUM CHLORIDE VAPOR TRANSPORT

被引：30

作者：

LUTHER, LC

ROCCASECCA, DD

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 08期

关键词：

D O I：

10.1149/1.2411447

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：850 / +

页数：1

共 27 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2]

AKASAKI I, 1967, MAY DALL M

[3]

ALFEROV ZI, 1966, FIZ TVERD TELA+, V7, P1915

[4] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION [J].

ANTELL, GR ;

EFFER, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) :509-511

[5]

CASEY HC, TO BE PUBLISHED

[6]

CASEY HW, UNPUBLISHED

[7] DIFFUSION + SOLUBILITY OF ZINC IN GALLIUM PHOSPHIDE SINGLE CRYSTALS [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :374-&

[8] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J].

EFFER, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) :1020-&

[9] PREPARATION OF INAS, INP, GAAS, AND GAP BY CHEMICAL METHODS [J].

EFFER, D ;

ANTELL, GR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) :252-253

[10] THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION [J].

FERGUSSON, RR ;

GABOR, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) :585-592

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