AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION

被引:194
作者
DEMARI, A
机构
关键词
D O I
10.1016/0038-1101(68)90137-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:33 / +
页数:1
相关论文
共 26 条
[1]   CHARACTERISTICS OF DIFFUSED P-N JUNCTIONS IN EPITAXIAL LAYERS [J].
BREITSCHWERDT, KG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (01) :13-+
[2]   CONDUCTION-DIFFUSION THEORY OF SEMICONDUCTOR JUNCTIONS [J].
CHANG, YF .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :534-&
[3]  
CHANG YF, 1967, SOLID STATE ELECTRON, V10, P281
[4]   ACCURATE NUMERICAL SOLUTION OF ONE-DIMENSIONAL P-NJUNCTION IN STEADY STATE [J].
DEMARI, A .
ELECTRONICS LETTERS, 1967, 3 (04) :142-&
[5]  
DEMARI A, 1967, TECHNICAL REPORT ELE
[6]   A COMPUTER SOLUTION FOR STEADY-STATE BEHAVIOUR OF A PN-JUNCTION DIODE [J].
FULKERSON, DE ;
NUSSBAUM, A .
SOLID-STATE ELECTRONICS, 1966, 9 (07) :709-+
[7]   HOLE-ELECTRON PRODUCT OF PN JUNCTIONS [J].
GUMMEL, HK .
SOLID-STATE ELECTRONICS, 1967, 10 (03) :209-&
[9]   FORWARD TRANSIENT BEHAVIOR OF P-N JUNCTION DIODES AT HIGH INJECTION LEVELS [J].
KANO, K ;
REICH, HJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (11) :515-&
[10]   DIFFUSED JUNCTION DEPLETION LAYER CALCULATIONS [J].
LAWRENCE, H ;
WARNER, RM .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (02) :389-403