TEMPERATURE-DEPENDENT CONDUCTIVITY OF CLOSELY COMPENSATED PHOSPHORUS-DOPED SILICON

被引：5

作者：

FINETTI, M ^{[1
]}

MAZZONE, AM ^{[1
]}

PASSARI, L ^{[1
]}

RICCO, B ^{[1
]}

SUSI, E ^{[1
]}

机构：

[1] CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY

来源：

PHILOSOPHICAL MAGAZINE | 1977年 / 35卷 / 05期

关键词：

D O I：

10.1080/14786437708232940

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1141 / 1151

页数：11

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