AN ANOMALOUS INCREASE OF THRESHOLD VOLTAGES WITH SHORTENING THE CHANNEL LENGTHS FOR DEEPLY BORON-IMPLANTED N-CHANNEL MOSFETS

被引：25
作者：
NISHIDA, M
ONODERA, H
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 09期
关键词：
D O I：
10.1109/T-ED.1981.20494
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1101 / 1103
页数：3
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