HIGH-INTENSITY LUMINESCENCE FROM PULSED-LASER ANNEALED EUROPIUM IMPLANTED SAPPHIRE

被引：13

作者：

CAN, N ^{[1
]}

TOWNSEND, PD ^{[1
]}

HOLE, DE ^{[1
]}

AFONSO, CN ^{[1
]}

机构：

[1] CSIC,INST OPT,E-28006 MADRID,SPAIN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 15期

关键词：

D O I：

10.1063/1.112871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sapphire samples (Al2O3) were implanted with 400-keV ions at a dose of 1 x 10(16) ions cm-2. A comparison was made between furnace annealing and pulsed laser annealing of the implanted samples. Furnace annealing to 1200-degrees-C, followed by excimer laser anneals, resulted in an increase of the cathodoluminescence emission intensity of the implanted europium by a factor of approximately 20. This enhanced intensity is approximately 50 times that of the signal prior to any form annealing treatment. It is proposed that the laser anneals dissociate Eu related clusters. The Eu 622-nm lifetime reached 1.53 ms compared with an original postimplant value of 0.14 ms. (C) 1994 American Institute of Physics.

引用

页码：1871 / 1873

页数：3

共 12 条

[1]

GUNTHER AH, 1983, SPIE, V401, P247

[2] DOPANT REDISTRIBUTION BY PULSED-LASER ANNEALING OF ION-IMPLANTED SILICON [J].