GROWTH AND CHARACTERIZATION OF LARGE DIAMETER UNDOPED SEMI-INSULATING GAAS FOR DIRECT ION-IMPLANTED FET TECHNOLOGY

被引：40
作者：
THOMAS, RN
HOBGOOD, HM
ELDRIDGE, GW
BARRETT, DL
BRAGGINS, TT
机构：
来源：
SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 05期
关键词：
D O I：
10.1016/0038-1101(81)90034-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：387 / &
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