SUB-0.1 MU-M RESIST PATTERNING IN SOFT-X-RAY (13NM) PROJECTION LITHOGRAPHY

被引：12

作者：

OIZUMI, H ^{[1
]}

MAEJIMA, Y ^{[1
]}

WATANABE, T ^{[1
]}

TAGUCHI, T ^{[1
]}

YAMASHITA, Y ^{[1
]}

ATODA, N ^{[1
]}

MURAKAMI, K ^{[1
]}

OHTANI, M ^{[1
]}

NAGATA, H ^{[1
]}

机构：

[1] NIKON INC,SHINAGAWA KU,TOKYO 140,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 12B期

关键词：

SOFT X-RAY PROJECTION LITHOGRAPHY; SXPL; 13NM; SCHWARZSCHILD OPTICS; DEPTH OF FOCUS; DOF; RESIST; POLY (METHYLMETHACRYLATE); PMMA; 0.05 MU-M PATTERN;

D O I：

10.1143/JJAP.32.5914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Poly (methylmethacrylate) (PMMA), resist performance for soft X-ray projection lithography (SXPL) at an exposure wavelength of 13 nm was investigated with an special emphasis on development condition dependence. The resist contrast value gamma for 13 nm SXPL showed strong dependence on the developer, in contrast with proximity X-ray lithography (XRL) at the peak-wavelength of 0.7 nm. With an optimized developer, a resolution as high as 0.05 mum was achieved. A wide focus range of 1.5 mum with a 0.1 mum line-and-space pattern was also confirmed.

引用

页码：5914 / 5917

页数：4

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