ELECTRICAL-PROPERTIES OF BLACK PHOSPHORUS SINGLE-CRYSTALS PREPARED BY THE BISMUTH-FLUX METHOD

被引：24
作者：
BABA, M
IZUMIDA, F
MORITA, A
KOIKE, Y
FUKASE, T
机构：
[1] ISHINOMAKI SENSHU UNIV,DEPT BASIC SCI,ISHINOMAKI 986,JAPAN
[2] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN
[3] TOHOKU UNIV,DEPT APPL PHYS,SENDAI,MIYAGI 980,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 08期
关键词：
BLACK PHOSPHORUS; ELEMENTAL SEMICONDUCTOR; LAYERED MATERIAL; ACCEPTOR LEVEL; ELECTRICAL CONDUCTIVITY; HALL EFFECT; HALL MOBILITY; MAGNETORESISTANCE;
D O I：
10.1143/JJAP.30.1753
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Systematic measurement of the electrical transport phenomena of black phosphorus grown by the all-closed bismuthflux method has been performed in the range from room temperature down to 0.5 K for the electrical resistivity and down to 1.5 K for the Hall effect and the magnetoresistance effect. These samples exhibited p-type conduction with two types of acceptors, of which activation energies were 26.1 meV and 11.8 meV, respectively. The effective concentrations of acceptors were typically 1.36 x 10(15) cm-3 for the deeper level and 0.44 x 10(15) cm-3 for the shallower level. The maximum of the Hall mobility was found to be 2 x 10(4) cm2/Vs around 20 K. A new observation of n-type conduction below about 7 K for some of these samples suggested the existence of a surface inversion layer as a channel of electron conduction.
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页码：1753 / 1758
页数：6
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