MODEL FOR EXCESS NOISE OF SEMICONDUCTING BASRTIO3

被引：3
|
作者：
AMBROZY, A
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 09期
关键词：
D O I：
10.1109/T-ED.1979.19610
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1368 / 1369
页数：2
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