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- [21] IMPLANTATION ANNEALING WITH A SCANNING ELECTRON-BEAM JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 303 - 306
- [22] FORMATION OF BURIED HIGH-RESISTIVITY LAYERS IN INP CRYSTALS BY MEV NITROGEN ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 487 - 491
- [23] MODELING OF THE FORMATION OF BURIED DIELECTRIC LAYERS BY ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 65 (1-4): : 67 - 72
- [24] ANNEALING OF DEFECTS CREATED IN SILICON BY MEV ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 (pt 2): : 528 - 531
- [25] CHARACTERISTICS OF EFG RIBBON SOLAR-CELLS FABRICATED BY THE ION-IMPLANTATION AND PULSED ELECTRON-BEAM ANNEALING TECHNIQUE SOLAR CELLS, 1984, 11 (01): : 29 - 39
- [26] PULSED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SI LAYERS RADIATION EFFECTS LETTERS, 1979, 43 (01): : 31 - 36