BANDGAP SHRINKAGE OF DEGENERATE P-TYPE GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY

被引：11

作者：

FENG, MS

FANG, CSA

CHEN, HD

机构：

[1] SINONAR CO,HSINCHU,TAIWAN

[2] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1995年 / 42卷 / 02期

关键词：

PHOTOLUMINESCENCE; SPECTROSCOPY; BANDGAP SHRINKAGE; GAAS;

D O I：

10.1016/0254-0584(95)01566-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence characteristics of heavily carbon-, beryllium- and zinc-doped GaAs were studied in this investigation. The band-to-acceptor (e,A) transition was identified via various doping concentrations from 10(17) to 10(20) cm(-3) and the temperature from 20 to 300 K. As a result the (e,A) peak was found to be a dominant peak at 20 K instead of the band-to-band (B,B) peak at p> 1 x 10(19) cm(-3). The (e,A) peak was also observed at 300 K and enhanced with the increasing carrier concentration at p> 2.8 x 10(18) cm(-3). Bandgap shrinkage of these samples was qualitatively obtained. When p> 1 x 10(19) cm(-3), the impurity band merges with the valence band and the binding energy of the acceptor is equal to zero. Consequently, the bandgap can be taken as the energy between the conduction-band minimum and the top of the impurity band.

引用

收藏

页码：143 / 147

页数：5

相关论文

共 50 条

[21] Investigation on the Photoluminescence of p-Type Porous Silicon for Ultraviolet Detector [J].

Ding, Jie ;

Ge, Linghui ;

Zhu, Xiaodong ;

Jiao, Jiwei ;

Zhang, Liqiang ;

Ge, Daohan .

RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A, 2021, 95 (13) :2663-2666

[22] Numerical analysis of abrupt current transitions in p-type GaAs [J].

Kim, B. W. .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (04) :1543-1547

[23] Carrier dynamics in p-type InGaAs/GaAs quantum dots [J].

X. M. Wen ;

L. V. Dao ;

J. A. Davis ;

P. Hannaford ;

S. Mokkapati ;

H. H. Tan ;

C. Jagadish .

Journal of Materials Science: Materials in Electronics, 2007, 18 :363-365

[24] Photoluminescence study of porous p-type silicon: Identification of radiative transitions [J].

Ramirez-Gutierrez, Cristian F. ;

Medina-Herrera, Andres ;

Tirado-Mejia, Liliana ;

Zubieta-Otero, Luis F. ;

Auciello, Orlando ;

Rodriguez-Garcia, Mario E. .

JOURNAL OF LUMINESCENCE, 2018, 201 :11-17

[25] Photoluminescence and electroluminescence properties of ZnO films on p-type silicon wafers [J].

Wang Fei-Fei ;

Cao Li ;

Liu Rui-Bin ;

Pan An-Lian ;

Zou Bing-Suo .

CHINESE PHYSICS, 2007, 16 (06) :1790-1795

[26] Voltage-induced Current-jump Assisted by Infrared or Temperature in p-type GaAs [J].

Choi, Sungyoul ;

Kim, Bong-Jun ;

Choi, Jeongyong ;

Kim, Hyun-Tak ;

Lee, Yong Wook ;

Seo, Gi Wan .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (06) :1769-1772

[27] Photoluminescence Excitation Spectroscopy of p-GaAs Surfaces and AlGaAs/GaAs Interfaces Supported by Numerical Modeling [J].

Montgomery, Kyle H. ;

Berdebes, Dionisis ;

Bhosale, Jayprakash ;

Woodall, Jerry M. ;

Lundstrom, Mark S. .

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012,

[28] Structural characterisation of US layers deposited on porous p-type GaAs [J].

Missaoui, Ali ;

Beji, Lotfi ;

Gaidi, Mounir ;

Harrabi, Zina ;

Ben Ouada, Hafedh ;

Bouazizi, Abdelaziz .

MICROELECTRONICS JOURNAL, 2007, 38 (01) :96-101

[29] Investigation of the optical and electrical properties of p-type porous GaAs structure [J].

Saghrouni, H. ;

Missaoui, A. ;

Hannachi, R. ;

Beji, L. .

SUPERLATTICES AND MICROSTRUCTURES, 2013, 64 :507-517

[30] Deep levels fine structure in proton implanted p-type GaAs [J].

Coelho, A. V. P. ;

Adam, M. C. ;

Boudinov, H. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (20)

← 1 2 3 4 5 →