FEMTOSECOND INVESTIGATIONS OF SPECTRAL HOLE-BURNING IN SEMICONDUCTOR-LASERS

被引：15
作者：
SUN, CK
GOLUBOVIC, B
CHOI, HK
WANG, CA
FUJIMOTO, JG
机构：
[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138
[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 13期
关键词：
D O I：
10.1063/1.113881
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An investigation of spectral hole burning effects is reported in the gain region of InGaAs/AlGaAs strained-layer single quantum well diode lasers, using a heterodyne nondegenerate pump-probe technique. This technique permits simultaneous measurement of the femtosecond dynamics and spectral dependence of transient gain in semiconductor lasers. At high bias current, strong spectral hole burning effects were observed. © 1995 American Institute of Physics.
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收藏
页码：1650 / 1652
页数：3
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