DEPENDENCE OF MAGNETORESISTANCE ON TEMPERATURE AND APPLIED VOLTAGE IN A 82NI-FE/AL-AL2O3/CO TUNNELING JUNCTION

被引：39

作者：

YAOI, T ^{[1
]}

ISHIO, S ^{[1
]}

MIYAZAKI, T ^{[1
]}

机构：

[1] TOHOKU UNIV,FAC ENGN,DEPT APPL PHYS,AOBA KU,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1993年 / 126卷 / 1-3期

关键词：

D O I：

10.1016/0304-8853(93)90646-J

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence of magnetoresistance on temperature T and on the applied voltage V in a 82Ni-Fe/Al-Al2O3/Co tunneling junction has been studied. The magnetoresistance DELTAR/R increased rapidly at T less-than-or-equal-to 30 K and V less-than-or-equal-to 2.5 mV. The result is discussed by taking into account the tunneling conductance due to ferromagnetic tunneling and nonferromagnetic tunneling causing the zero-bias anomaly.

引用

页码：430 / 432

页数：3

共 11 条

[1] EXCHANGE MODEL OF ZERO-BIAS TUNNELING ANOMALIES [J].

APPELBAUM, JA .

PHYSICAL REVIEW, 1967, 154 (03) :633-+

[2] TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

JULLIERE, M .

PHYSICS LETTERS A, 1975, 54 (03) :225-226

[3] ELECTRON-TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

MAEKAWA, S ;

GAFVERT, U .

IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (02) :707-708

[4] LARGE MAGNETORESISTANCE EFFECT IN 82NI-FE/AL-AL2O3/CO MAGNETIC TUNNELING JUNCTION [J].

MIYAZAKI, T ;

YAOI, T ;

ISHIO, S .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1991, 98 (1-2) :L7-L9

[5] SPIN DEPENDENT ELECTRON-TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

NOWAK, J ;

RAULUSZKIEWICZ, J .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1992, 109 (01) :79-90

[6] ZERO-BIAS TUNNELING ANOMALIES - TEMPERATURE VOLTAGE AND MAGNETIC FIELD DEPENDENCE [J].

SHEN, LYL ;

ROWELL, JM .

PHYSICAL REVIEW, 1968, 165 (02) :566-&

[7] VOLT-CURRENT CHARACTERISTICS FOR TUNNELING THROUGH INSULATING FILMS [J].

STRATTON, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (SEP) :1177-&

[8]

Suezawa Y., 1987, Proceedings of the International Symposium on Physics of Magnetic Materials, P303

[9] SPIN POLARIZATION OF ELECTRONS TUNNELING FROM FILMS OF FE, CO, NI, AND GD [J].

TEDROW, PM ;

MESERVEY, R .

PHYSICAL REVIEW B, 1973, 7 (01) :318-326

[10]

YAOI T, 1992, J MAGN SOC JPN, V16, P303

← 1 2 →