PICOSECOND PHOTOCONDUCTIVITY IN GERMANIUM FILMS

被引：22

作者：

DEFONZO, AP

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 06期

关键词：

D O I：

10.1063/1.92766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：480 / 482

页数：3

共 9 条

[1] PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].

AUSTON, DH ;

JOHNSON, AM ;

SMITH, PR ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :371-373

[2]

AUSTON DH, 1980, APPL PHYS LETT, V35, P66

[3]

DEFONZO AP, UNPUBLISHED

[4] FAST PHOTOCONDUCTIVE DETECTOR USING PARA-INO.53GAO.47AS WITH RESPONSE TO 1.7-MU-M [J].

DEGANI, J ;

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

HERITAGE, JP ;

DEWINTER, JC .

APPLIED PHYSICS LETTERS, 1981, 38 (01) :27-29

[5]

GAMMEL JC, 1980, APPL PHYS LETT, V36, P151

[6] HIGH-SPEED INP OPTOELECTRONIC SWITCH [J].

LEONBERGER, FJ ;

MOULTON, PF .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :712-714

[7] PICOSECOND PHOTOCONDUCTIVITY IN RADIATION-DAMAGED SILICON-ON-SAPPHIRE FILMS [J].

SMITH, PR ;

AUSTON, DH ;

JOHNSON, AM ;

AUGUSTYNIAK, WM .

APPLIED PHYSICS LETTERS, 1981, 38 (01) :47-50

[8]

SUGATA T, 1980, JPN J APPL PHYS, V19, pL27

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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