GATE DRIVE CIRCUITS FOR POWER MOSFETS

被引：0

作者：

COYLE, ED

ODWYER, J

DUIGNAN, F

机构：

[1] Coll of Technology, Dublin

来源：

INTERNATIONAL JOURNAL OF ELECTRICAL ENGINEERING EDUCATION | 1991年 / 28卷 / 04期

关键词：

D O I：

10.1177/002072099102800410

中图分类号：

G40 [教育学];

学科分类号：

040101 ; 120403 ;

摘要：

Advances in recent years in the manufacture of metal oxide Field Effect Transistors (Mosfets) have paved the way for new design criteria in solid-state switching power circuits. This paper gives an insight into the knowledge gained in the design of gate drive circuits for power mosfet switching devices.

引用

页码：350 / 360

页数：11

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