CARBON AND ZINC DELTA DOPING FOR SCHOTTKY-BARRIER ENHANCEMENT ON N-TYPE GAAS

被引:23
作者
PEARTON, SJ
REN, F
ABERNATHY, CR
HOBSON, WS
CHU, SNG
KOVALCHICK, J
机构
关键词
D O I
10.1063/1.101650
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1342 / 1344
页数:3
相关论文
共 15 条
[1]   SIMPLIFIED SELF-CONSISTENT MODEL FOR IMAGE FORCE AND INTERFACE CHARGE IN SCHOTTKY BARRIERS [J].
CROWELL, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :951-957
[2]   ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS [J].
EGLASH, SJ ;
NEWMAN, N ;
PAN, S ;
MO, D ;
SHENAI, K ;
SPICER, WE ;
PONCE, FA ;
COLLINS, DM .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) :5159-5169
[3]  
EGLASH SJ, 1983, JPN J APPL PHYS, V22, P431
[4]   ENHANCED SCHOTTKY BARRIERS PRODUCED BY RECOIL IMPLANTATION OF MG INTO N-GAAS [J].
EIZENBERG, M ;
CALLEGARI, AC ;
SADANA, DK ;
HOVEL, HJ ;
JACKSON, TN .
APPLIED PHYSICS LETTERS, 1989, 54 (17) :1696-1698
[5]   ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY [J].
KOBAYASHI, N ;
MAKIMOTO, T ;
HORIKOSHI, Y .
APPLIED PHYSICS LETTERS, 1987, 50 (20) :1435-1437
[6]   FUNDAMENTAL-STUDIES AND DEVICE APPLICATION OF DELTA-DOPING IN GAAS-LAYERS AND IN ALXGA1-XAS/GAAS HETEROSTRUCTURES [J].
PLOOG, K ;
HAUSER, M ;
FISCHER, A .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (03) :233-244
[7]   DESIGN OF ENHANCED SCHOTTKY-BARRIER ALGAAS/GAAS MODFETS USING HIGHLY DOPED P+ SURFACE-LAYERS [J].
PRIDDY, KL ;
KITCHEN, DR ;
GRZYB, JA ;
LITTON, CW ;
HENDERSON, TS ;
PENG, CK ;
KOPP, WF ;
MORKOC, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :175-180
[8]  
RHODERICK E, 1977, METAL SEMICONDUCTOR
[9]   CHARACTERIZATION OF P-TYPE GAAS HEAVILY DOPED WITH CARBON GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].
SAITO, K ;
TOKUMITSU, E ;
AKATSUKA, T ;
MIYAUCHI, M ;
YAMADA, T ;
KONAGAI, M ;
TAKAHASHI, K .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) :3975-3979
[10]   CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J].
SHANNON, JM .
SOLID-STATE ELECTRONICS, 1976, 19 (06) :537-543