FREQUENCY-RESPONSE OF INP/INGAASP/INGAAS AVALANCHE PHOTODIODES

被引:57
作者
CAMPBELL, JC
JOHNSON, BC
QUA, GJ
TSANG, WT
机构
关键词
D O I
10.1109/50.19113
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:778 / 784
页数:7
相关论文
共 27 条
[1]   INGAAS PIN PHOTODETECTORS WITH MODULATION RESPONSE TO MILLIMETER WAVELENGTHS [J].
BOWERS, JE ;
BURRUS, CA ;
MCCOY, RJ .
ELECTRONICS LETTERS, 1985, 21 (18) :812-814
[2]   HIGH-SPEED, POLYIMIDE-BASED SEMIINSULATING PLANAR BURIED HETEROSTRUCTURES [J].
BOWERS, JE ;
KOREN, U ;
MILLER, BI ;
SOCCOLICH, C ;
JAN, WY .
ELECTRONICS LETTERS, 1987, 23 (24) :1263-1265
[3]   IMPROVED VERY-HIGH-SPEED PACKAGED INGAAS PIN PUNCH-THROUGH PHOTODIODE [J].
BURRUS, CA ;
BOWERS, JE ;
TUCKER, RS .
ELECTRONICS LETTERS, 1985, 21 (07) :262-263
[4]   INP/INGAASP/INGAAS AVALANCHE PHOTODIODES WITH 70 GHZ GAIN-BANDWIDTH PRODUCT [J].
CAMPBELL, JC ;
TSANG, WT ;
QUA, GJ ;
BOWERS, JE .
APPLIED PHYSICS LETTERS, 1987, 51 (18) :1454-1456
[5]   FREQUENCY-RESPONSE OF INP/INGAASP/INGAAS AVALANCHE PHOTODIODES WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS [J].
CAMPBELL, JC ;
HOLDEN, WS ;
QUA, GJ ;
DENTAI, AG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (11) :1743-1746
[6]  
CAMPBELL JC, 1985, 5TH P INT C INT OPT
[7]  
CAMPBELL JC, IN PRESS J LIGHTWAVE
[8]   OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].
FORREST, SR ;
KIM, OK ;
SMITH, RG .
APPLIED PHYSICS LETTERS, 1982, 41 (01) :95-98
[9]  
FORREST SR, 1985, SEMICONDUCT SEMIMET, V22, pCH4
[10]  
FUJITA S, 1986, 12TH P EUR C OPT COM