EPITAXIAL PBSE SCHOTTKY-BARRIER DIODES FOR INFRARED DETECTION

被引：32

作者：

HOHNKE, DK ^{[1
]}

HOLLOWAY, H ^{[1
]}

机构：

[1] FORD MOTOR CO,SCI RES STAFF,DEARBORN,MI 48121

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 12期

关键词：

D O I：

10.1063/1.1655084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：633 / 635

页数：3

共 8 条

[1]

BUTLER JF, 1972, IRIS DETECTOR SPECIA

[2] PHOTOVOLTAIC EFFECT IN LEAD SELENIDE P-N-JUNCTIONS [J].

CHAMBOULEYRON, I ;

BESSON, JM ;

BALKANSKI, M .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3222-3227

[3] EPITAXIAL PBSE AND PB1-CHI SN CHI SE - GROWTH AND ELECTRICAL PROPERTIES [J].

HOHNKE, DK ;

KAISER, SW .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :892-897

[4] INJECTION LUMINESCENCE AND LASER ACTION IN EPITAXIAL PBTE DIODES [J].

HOLLOWAY, H ;

YEUNG, KF ;

VARGA, AJ ;

WEBER, WH ;

LOGOTHETIS, EM .

APPLIED PHYSICS LETTERS, 1972, 21 (01) :5-+

[5] A PHOTOSENSITIVE SINGLE CRYSTAL P-N JUNCTION IN LEAD SELENIDE [J].

KIMMITT, MF ;

PRIOR, AC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (11) :1034-1038

[6] INFRARED DETECTION BY SCHOTTKY BARRIERS IN EPITAXIAL PBTE [J].

LOGOTHETIS, EM ;

HOLLOWAY, H ;

VARGA, AJ ;

WILKES, E .

APPLIED PHYSICS LETTERS, 1971, 19 (09) :318-+

[7]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[8]

ZEMEL JN, 1965, PHYS REV A, V140, P330

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