IMPURITY CONDUCTION IN P-TYPE ZNSNAS2

被引：3
|
作者：
ISOMURA, S
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 02期
关键词：
D O I：
10.1002/pssa.2210660266
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K157 / K164
页数：8
相关论文
共 50 条
  • [11] EFFECTIVE MASS OF HOLES IN ZNSNAS2
    KORNEEV, EF
    SHMARTSE.YV
    REMENYUK, AD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (08): : 1465 - &
  • [12] EDGE ABSORPTION OF A ZNSNAS2 CRYSTAL
    RUD, YV
    SOBOLEV, VV
    SHESTATS.SN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (06): : 745 - &
  • [13] DIE KRISTALLSTRUKTUR VON ZNSNAS2
    FOLBERTH, OG
    PFISTER, H
    ACTA CRYSTALLOGRAPHICA, 1960, 13 (03): : 199 - 201
  • [14] IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM
    FRITZSCHE, H
    CUEVAS, M
    PHYSICAL REVIEW, 1960, 119 (04): : 1238 - 1245
  • [15] CONDUCTION INVOLVING DEEP IMPURITY CENTERS IN P-TYPE INSB
    KURILENKO, IN
    LITVAKGORSKAYA, LB
    LUGOVAYA, GE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (08): : 906 - 910
  • [16] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM
    FRITZSCHE, H
    LARKHOROVITZ, K
    PHYSICAL REVIEW, 1959, 113 (04): : 999 - 1001
  • [17] Growth and structure of ZnSnAs2 crystals
    S. F. Marenkin
    V. M. Trukhan
    K. K. Palkina
    T. V. Haliakevich
    S. G. Mikhailov
    A. V. Molchanov
    Russian Journal of Inorganic Chemistry, 2006, 51 : 790 - 793
  • [18] ENTHALPY AND ENTROPY OF FORMATION OF ZNSNAS2
    SMOLYARENKO, EM
    YAKIMOVICH, VN
    INORGANIC MATERIALS, 1980, 16 (02) : 135 - 137
  • [19] PROPERTIES OF ZNSNAS2 AND CDSNAS2
    GASSON, DB
    PARROTT, JE
    JENNINGS, IC
    HOLMES, PJ
    MARATHE, BR
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (SEP) : 1291 - &
  • [20] PHASE-TRANSFORMATIONS IN ZNSNAS2 COMPOUND
    RUD, YV
    TASHTANO.M
    FIZIKA TVERDOGO TELA, 1973, 15 (10): : 3108 - 3111
12345