EFFECT OF GROWTH-RATE ON THE SURFACE-MORPHOLOGY OF MBE-GROWN GAAS(001)-(2X4)

被引：11
|
作者：
MABOUDIAN, R
BRESSLERHILL, V
POND, K
WANG, XS
PETROFF, PM
WEINBERG, WH
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT CHEM ENGN,SANTA BARBARA,CA 93106
[2] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106
[3] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
来源：
SURFACE SCIENCE | 1994年 / 302卷 / 1-2期
关键词：
D O I：
10.1016/0039-6028(94)91087-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Scanning tunneling microscopy (STM) has been used to investigate the effect of the deposition rate on the resulting morphology of GaAs(001)-(2 X 4) surfaces grown by molecular beam epitaxy. Low deposition rates (0.2 mu m/h) are found to create smooth surfaces and lead to anisotropic islanding with average length ratios of A steps to B steps which are measurably larger than those produced by standard deposition rates (0.7 mu m/h). For each growth rate, the mean-square-height fluctuation function has been calculated in order to characterize the surface roughness observed with STM and the anisotropy associated with the roughness.
引用
收藏
页码：L269 / L274
页数：6
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