DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON

被引：118
作者：
HORN, FH
机构：
来源：
PHYSICAL REVIEW | 1955年 / 97卷 / 06期
关键词：
D O I：
10.1103/PhysRev.97.1521
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1521 / 1525
页数：5
相关论文
共 11 条
[1]   HALL MOBILITY OF ELECTRONS AND HOLES IN SILICON [J].
DEBYE, PP ;
KOHANE, T .
PHYSICAL REVIEW, 1954, 94 (03) :724-725
[2]  
DORSEY NE, 1940, PROPERTIES ORDINARY, P200
[3]   DISTORTION OF A CRYSTAL BY POINT IMPERFECTIONS [J].
ESHELBY, JD .
JOURNAL OF APPLIED PHYSICS, 1954, 25 (02) :255-261
[4]  
Gallagher Gary, COMMUNICATION
[5]   SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS [J].
HALL, RN .
JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) :836-839
[6]  
LINDERSTROM-LANG K., 1938, Comptes rendus des Travaux du Laboratoire Carlsberg, Ser. Chim., V21, P315
[7]  
LINDERSTROMLANG, 1941, COMPT REND TRAV LAB, V23, P17
[8]   ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].
MORIN, FJ ;
MAITA, JP .
PHYSICAL REVIEW, 1954, 96 (01) :28-35
[9]   ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J].
PEARSON, GL ;
BARDEEN, J .
PHYSICAL REVIEW, 1949, 75 (05) :865-883
[10]   PRINCIPLES OF ZONE-MELTING [J].
PFANN, WG .
JOURNAL OF METALS, 1952, 4 (07) :747-753
12