METHOD OF DECORATING P-N-JUNCTIONS IN SILICON

被引:0
|
作者
KURMASHEV, VI
PETROVICH, VA
机构
来源
INDUSTRIAL LABORATORY | 1979年 / 45卷 / 02期
关键词
D O I
暂无
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:182 / 183
页数:2
相关论文
共 50 条
  • [1] INHOMOGENEITIES IN SILICON P-N-JUNCTIONS
    BULARSKII, SV
    BUTYLKINA, NA
    GRUSHKO, NS
    LUKYANOV, AY
    NAZAROV, MV
    STEPIN, IO
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1991, 34 (04): : 71 - 75
  • [2] POLYCRYSTALLINE SILICON P-N-JUNCTIONS
    CHU, TL
    CHU, SS
    VANDERLEEDEN, GA
    LIN, CJ
    BOYD, JR
    SOLID-STATE ELECTRONICS, 1978, 21 (05) : 781 - 786
  • [3] POLYCRYSTALLINE SILICON P-N-JUNCTIONS
    CHU, TL
    VANDERLEEDEN, GA
    CHU, SC
    BOYD, JR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C105 - C105
  • [4] HYDROGEN IMMOBILIZATION IN SILICON P-N-JUNCTIONS
    JOHNSON, NM
    HERRING, C
    PHYSICAL REVIEW B, 1988, 38 (02): : 1581 - 1584
  • [5] INJECTION EFFICIENCY OF P-N-JUNCTIONS IN SILICON
    GREKHOV, IV
    KOROBKOV, NN
    OTBLESK, AE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 493 - 494
  • [6] SOUND INVESTIGATIONS OF SILICON P-N-JUNCTIONS
    GELLER, IK
    DORIN, VA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1968, (06): : 71 - &
  • [7] DIELECTRIC PROPERTIES OF SILICON P-N-JUNCTIONS
    BARSONY, I
    JONSCHER, AK
    SOLID-STATE ELECTRONICS, 1978, 21 (02) : 471 - 473
  • [8] FRACTAL-DIFFUSED P-N-JUNCTIONS IN SILICON
    BAGRAEV, NT
    KLYACHKIN, LE
    MALYARENKO, AM
    SUKHANOV, VL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (04): : 391 - 396
  • [9] P-N-JUNCTIONS IN POLYCRYSTALLINE-SILICON FILMS
    MANOLIU, J
    KAMINS, TI
    SOLID-STATE ELECTRONICS, 1972, 15 (10) : 1103 - &
  • [10] ANISOTROPY OF AVALANCHE BREAKDOWN IN SILICON P-N-JUNCTIONS
    KYUREGYAN, AS
    SOROKIN, YG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (11): : 1232 - 1234