ION-IMPLANTATION IN AMORPHOUS-GERMANIUM AND SILICON

被引：5

作者：

SEKHAR, P ^{[1
]}

JOSHI, MC ^{[1
]}

NARASIMHAN, KL ^{[1
]}

GUHA, S ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 26卷 / 12期

关键词：

D O I：

10.1016/0038-1098(78)91255-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：933 / 936

页数：4

共 11 条

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OLLEY, JA .

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[6]

OLLEY JA, 1975, SOLID STATE COMMUN A, V30, P231

[7] ELECTRICAL-CONDUCTION MECHANISMS IN THIN AMORPHOUS-SEMICONDUCTOR FILMS [J].

PAUL, W .

THIN SOLID FILMS, 1976, 33 (03) :381-396

[8] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J].

PAUL, W ;

LEWIS, AJ ;

CONNELL, GAN ;

MOUSTAKAS, TD .

SOLID STATE COMMUNICATIONS, 1976, 20 (10) :969-972

[9] PHOTO AND DARK CONDUCTIVITY OF DOPED AMORPHOUS SILICON [J].

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[10]

Spear W. E., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P1

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