THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS

被引：139
作者：
CHAI, YG
WOOD, CEC
CHOW, R
机构：
[1] CORNELL UNIV,NATL RES & RESOURCE FAC SUBMICRON STRUCT,ITHACA,NY 14853
[2] CORNELL UNIV,DEPT ELECT ENGN,ITHACA,NY 14853
来源：
APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 10期
关键词：
D O I：
10.1063/1.92562
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：800 / 803
页数：4
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