PREPARATION OF (BA, SR)TIO3 THIN-FILMS BY CHEMICAL-VAPOR-DEPOSITION USING LIQUID SOURCES

被引：43

作者：

KAWAHARA, T ^{[1
]}

YAMAMUKA, M ^{[1
]}

MAKITA, T ^{[1
]}

TSUTAHARA, K ^{[1
]}

YUUKI, A ^{[1
]}

ONO, K ^{[1
]}

MATSUI, Y ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CORP,KITA ITAMI WORKS,ITAMI,HYOGO 664,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 10期

关键词：

LSI; CVD; CAPACITOR; BST; DPM; DIELECTRIC CONSTANT; LEAKAGE CURRENT; DIELECTRIC LOSS; STEP COVERAGE;

D O I：

10.1143/JJAP.33.5897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of (Ba, Sr)TiO3 with high dielectric constant were prepared on Pt/SiO2/Si substrates of 6-inch-diameter by chemical vapor deposition using liquid sources. Ba(DPM)(2) and Sr(DPM)(2) dissolved into tetrahydrofuran were vaporized in a vaporizer at 523 K, and Ti(O-i-C3H7)(4) was bubbled at 313 K. The mixture of the source vapors with O-2 and N2O was supplied to the reactor (10 Torr) at uniform velocities through a shower-type nozzle, which realized uniform profiles in the deposited film thickness and composition. The electrical properties are significantly influenced by the film composition, and the typical properties obtained for a 800-Angstrom-thick film prepared at the substrate temperature of 823 K are an equivalent SiO2 thickness t(eq) of 5.2 Angstrom, a leakage current J(L) of 2.4 x 10(-6) A/cm(2) (at 1.65 V), and a dielectric loss tan delta of 0.07.

引用

页码：5897 / 5902

页数：6

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