THERMALLY INDUCED NEGATIVE-RESISTANCE IN SI-DOPED YIG

被引：11
作者：
KAPLAN, T
ADLER, D
BULLOCK, DC
EPSTEIN, DJ
机构：
来源：
APPLIED PHYSICS LETTERS | 1972年 / 20卷 / 11期
关键词：
D O I：
10.1063/1.1654007
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：439 / &
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[1]   NEW TECHNIQUE FOR GENERATING MAGNETIC BUBBLES [J].
BULLOCK, DC ;
EPSTEIN, DJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (12) :1713-&
[2]   NEGATIVE RESISTANCE, CONDUCTIVE SWITCHING, AND MEMORY EFFECT IN SILICON-DOPED YTTRIUM-IRON GARNET CRYSTALS [J].
BULLOCK, DC ;
EPSTEIN, DJ .
APPLIED PHYSICS LETTERS, 1970, 17 (05) :199-&
[3]   THERMAL CONDUCTIVITY OF GARNETS AND PHONON SCATTERING BY RARE-EARTH IONS [J].
SLACK, GA ;
OLIVER, DW .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02) :592-&
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