REPRODUCIBLE FABRICATION OF ALGAAS/GAAS CIRCULAR BURIED HETEROSTRUCTURE (CBH) SURFACE-EMITTING LASERS WITH LOW THRESHOLDS

被引：9

作者：

KINOSHITA, S

MORITO, K

KOYAMA, F

IGA, K

机构：

[1] Tokyo Inst of Technology, Yokohama, Jpn, Tokyo Inst of Technology, Yokohama, Jpn

来源：

关键词：

D O I：

10.1049/el:19880472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：699 / 700

页数：2

共 6 条

IGA, K ;

ISHIKAWA, S ;

OHKOUCHI, S ;

NISHIMURA, T .

[2] MICROCAVITY GAALAS/GAAS SURFACE-EMITTING LASER WITH ITH=6MA [J].

IGA, K ;

KINOSHITA, S ;

KOYAMA, F .

[3]

Iga K., 1985, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE68, P91

[4]

IGA K, 1987, 13TH P EUR C OPT COM, P3

KINOSHITA, S ;

SAKAGUCHI, T ;

ODAGAWA, T ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (03) :410-415

[6] 2-DIMENSIONAL ARRAY OF GAINASP-INP SURFACE-EMITTING LASERS [J].

UCHIYAMA, S ;

IGA, K .