IMPACT IONIZATION BREAKDOWN OF N-TYPE EPITAXIAL GAAS AT LIQUID HELIUM TEMPERATURES

被引：45
作者：
REYNOLDS, RA
机构：
来源：
SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 04期
关键词：
D O I：
10.1016/0038-1101(68)90018-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：385 / &
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