THE INCLUSION OF A FINITE CAPTURE TIME IN THE NUMERICAL-SIMULATION OF QUANTUM EFFECT DEVICES

被引:0
|
作者
GAULT, M [1 ]
MATSUURA, H [1 ]
FURUYA, K [1 ]
MAWBY, P [1 ]
TOWERS, MS [1 ]
机构
[1] TOKYO INST TECHNOL,DEPT ELECTR ENGN,MEGURO KU,TOKYO 152,JAPAN
关键词
D O I
10.1016/0038-1101(94)E0056-K
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A simple numerical method is presented to include the phenomenon of a finite quantum well capture time in the numerical simulation of quantum effect devices. If the time taken to leave the quantum well (through tunnelling) is sufficiently short the electron states in the quantum well will remain relatively unoccupied due to the finite scattering time from the three-dimensional continuum into the two-dimensional states. A numerical formulation is presented which models this phenomenon by using an effective Fermi function for the occupancy of the two-dimensional states, enabling the method to be used in conjunction with general purpose device simulators. The method is applied to a simple tunnel barrier to show the generality of the model and a method is proposed to measure the capture time of quantum wells via observing the output energy spectrum.
引用
收藏
页码:9 / 15
页数:7
相关论文
共 50 条
  • [1] THE INCLUSION OF A FINITE CAPTURE TIME IN NUMERICAL DEVICE SIMULATION
    GAULT, M
    MATSUURA, H
    FURUYA, K
    MAWBY, P
    TOWERS, MS
    COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 1994, 13 (04) : 703 - 716
  • [2] NUMERICAL-SIMULATION OF QUANTUM CHROMODYNAMICS
    SUGAR, RL
    COMPUTER PHYSICS COMMUNICATIONS, 1991, 65 (1-3) : 268 - 280
  • [3] NUMERICAL-SIMULATION OF SEMICONDUCTOR-DEVICES
    SELBERHERR, S
    LANGER, E
    SIMULATION APPLIED TO MANUFACTURING ENERGY AND ENVIRONMENTAL STUDIES AND ELECTRONICS AND COMPUTER ENGINEERING, 1989, : 291 - 296
  • [4] NUMERICAL-SIMULATION OF OPTICAL-DEVICES
    VECCHI, MC
    RUDAN, M
    SONCINI, G
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1993, 12 (10) : 1557 - 1569
  • [5] SIC DEVICES - PHYSICS AND NUMERICAL-SIMULATION
    RUFF, M
    MITLEHNER, H
    HELBIG, R
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) : 1040 - 1054
  • [6] NUMERICAL-SIMULATION OF SEMICONDUCTOR-DEVICES
    BREZZI, F
    MARINI, LD
    PIETRA, P
    COMPUTER METHODS IN APPLIED MECHANICS AND ENGINEERING, 1989, 75 (1-3) : 493 - 514
  • [7] NUMERICAL-SIMULATION OF FINITE LENGTH HELICES
    BOURIANOFF, GI
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (08): : 839 - 839
  • [8] NUMERICAL-SIMULATION OF QUANTUM SPIN MODELS
    KUNG, D
    BLANKENBECLER, R
    SUGAR, RL
    PHYSICAL REVIEW B, 1985, 32 (05): : 3058 - 3066
  • [9] NUMERICAL-SIMULATION OF FLOW THROUGH BIOFLUID DEVICES
    ROGERS, SE
    KWAK, D
    KIRIS, C
    CHANG, ID
    INTERNATIONAL JOURNAL OF SUPERCOMPUTER APPLICATIONS AND HIGH PERFORMANCE COMPUTING, 1990, 4 (02): : 96 - 106
  • [10] NUMERICAL-SIMULATION OF THE WEISSENBERG EFFECT
    ZAGO, JV
    MATEMATICA APLICADA E COMPUTACIONAL, 1984, 3 (01): : 3 - 22