RELIABILITY STUDIES OF 0.85 MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS - 50000-H MTTF AT 25-DEGREES-C

被引:7
作者
WU, CC
TAI, K
HAUNG, KF
机构
[1] CHIAO TUNG UNIV,INST ELECTROOPT ENGN,HSINCHU,TAIWAN
[2] CHIAO TUNG UNIV,INST ELECTROPHYS,HSINCHU,TAIWAN
关键词
SEMICONDUCTOR LASERS; RELIABILITY;
D O I
10.1049/el:19931300
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Reliability studies of gain-guieded 0.85 mum GaAs/AlGaAs quantum well surface emitting lasers were performed on 45 randomly selected lasers operated at 25, 50 or 90-degrees-C with biased currents up to 15 mA (about four times the threshold values). At 25-degrees-C, no noticeable degradation was seen after 5000 h of operation. A 14% reduction of power was seen at 50-degrees-C after 2700h. A faster degradation on power output was seen at 90-degrees-C, though the lasers are still functional after 1000h. The mean time toward failure (MTTF) of these lasers operated at 25-degrees-C and 15mA is extrapolated to be approximately 5 x 10(4)h.
引用
收藏
页码:1953 / 1954
页数:2
相关论文
共 5 条
[1]   PERFORMANCE OF GAIN-GUIDED SURFACE EMITTING LASERS WITH SEMICONDUCTOR DISTRIBUTED BRAGG REFLECTORS [J].
HASNAIN, G ;
TAI, K ;
YANG, L ;
WANG, YH ;
FISCHER, RJ ;
WYNN, JD ;
WEIR, B ;
DUTTA, NK ;
CHO, AY .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1377-1385
[2]   SURFACE EMITTING SEMICONDUCTOR-LASERS [J].
IGA, K ;
KOYAMA, F ;
KINOSHITA, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) :1845-1855
[3]   LOW-THRESHOLD ELECTRICALLY PUMPED VERTICAL-CAVITY SURFACE-EMITTING MICROLASERS [J].
JEWELL, JL ;
SCHERER, A ;
MCCALL, SL ;
LEE, YH ;
WALKER, S ;
HARBISON, JP ;
FLOREZ, LT .
ELECTRONICS LETTERS, 1989, 25 (17) :1123-1124
[4]  
WU CC, 1993, 1993 ANN M OPT SOC A
[5]  
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