HIGH-POWER GAINASSB-ALGAASSB MULTIPLE-QUANTUM-WELL DIODE-LASERS EMITTING AT 1.9 MU-M

被引：80
作者：
CHOI, HK
TURNER, GW
EGLASH, SJ
机构：
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 01期
关键词：
D O I：
10.1109/68.265873
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-power diode lasers emitting at approximately 1.9 mum have been fabricated from a quantum-well heterostructure having an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. For devices 300 mum wide and 1000 mum long, single-ended output power as high as 1.3 W cw has been obtained with an initial differential quantum efficiency of 47%. The pulsed threshold current density is as low as 143 A/cm2 for 2000-mum-long devices.
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页码：7 / 9
页数：3
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