ELECTROPHYSICAL PROPERTIES OF THERMALLY TREATED GALLIUM-ARSENIDE

被引：0

作者：

KRIVOV, MA ^{[1
]}

MALISOVA, EV ^{[1
]}

POPOVA, EA ^{[1
]}

机构：

[1] VD KUZNETSOV ENGN PHYS INST, TOMSK, USSR

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1973年 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：69 / 76

页数：8

共 19 条

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[2]

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[4]

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ALLISON, HW .

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[6] HALL-EFFECT LEVELS PRODUCED IN TE-DOPED GAAS CRYSTALS BY CU DIFFUSION [J].

FULLER, CS ;

WOLFSTIRN, KB ;

ALLISON, HW .

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[7] SOLUBILITY AND IONIZATION ENERGY OF CU AND HOLE MOBILITY IN CU DIFFUSED GAAS [J].

FURAKAWA, Y .

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[8] EFFECT OF ARSENIC PRESSURE ON SOLUBILITY OF COPPER IN GAAS [J].

FURUKAWA, Y ;

THURMOND, CD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (09) :1535-&

[9]

HIDEAKI I, 1968, J PHYS SOC JPN, V25, P1069

[10] PHOTOLUMINESCENCE STUDY OF THERMAL CONVERSION IN GAAS GROWN FROM SILICA BOATS [J].

HWANG, CJ .

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