MINORITY-CARRIER LIFETIMES IN IDEAL INGASB/INAS SUPERLATTICES

被引：178

作者：

GREIN, CH

YOUNG, PM

EHRENREICH, H

机构：

[1] Division of Applied Sciences, Harvard University, Cambridge

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 24期

关键词：

D O I：

10.1063/1.108480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Calculations of band-to-band Auger and radiative recombination lifetimes of the recently proposed InxGa1-xSb/InAs superlattices (SL) show them to be promising infrared detectors. Several superlattices with energy gaps in the 5-11 mum range exhibit suppressed p-type Auger recombination rates due to a large light hole-heavy hole splitting. The p-type Auger lifetime at 77 K of an 11 mum InxGa1-xSb/InAs SL is found to be, respectively, three and five orders of magnitude longer than those of bulk and superlattice HgCdTe with the same energy gap. The n-type lifetimes are comparable.

引用

页码：2905 / 2907

页数：3

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